A diode laser device is made from semiconductor, a material with its electrical conductivity dictated by the quantities of negatively and positively charged mobile particles within itself, which are referred as electrons and holes, respectively. An n-type semiconductor possesses more electrons than holes while a p-type semiconductor has more holes than electrons. Traditional diode laser devices contain a key component equivalent to a p-n junction, where electrons and holes meet and recombine to emit light. Diode lasers with emission wavelengths in the infrared and visible spectral bands are widely commercially available. In contrast, those devices emitting lasing with wavelengths less than 315 nanometers in the deep ultraviolet (UV) spectral bands (UV-B and UV-C) are severely underdeveloped. This is because the material used to develop those lasers, namely aluminum gallium nitride (AlGaN), has fundamental issues including weak p- and n-type conductivities. This project addresses this challenge by developing novel metal-semiconductor-metal random laser devices based on magnesium zinc oxide (MgZnO) semiconductors. These devices use the injection of high-energy electrons from power supply to generate amplified numbers of electron-hole pairs for lasing, thus circumventing the strong p-type requirement in conventional semiconductor p-n junction lasers. The principal investigator and his students will work to achieve MgZnO lasers with deep-UV emission wavelengths between 315 and 20