Quantum networking represents an enabling technology to build distributed quantum systems through remote entanglement. It offers transformative capabilities in secure communications and constructing large-scale quantum computers. T centers in silicon emerge as a novel type of qubit for quantum networking applications, owing to their preferrable telecom optical transitions and long spin coherence times. This research endeavor seeks to investigate and control the spin-photon interface properties of device-integrated single T centers via externally applied electric fields. The knowledge and methods gained about the electric field control of T center electrical environment will help to tackle the critical spectral diffusion issue for single T centers and boost the advancement of constructing scalable quantum networks based on device-integrated T center qubits. Beyond the scientific objectives, this project is also committed to training the next-generation quantum workforce. We will incorporate interdisciplinary education initiatives – spanning quantum curriculum development, capstone and REU projects, lab summer internship, and high school outreach – aimed at engaging students from different academic backgrounds in cutting-edge quantum information science and technology research. Technical Description: Single T center spins in silicon are promising candidates for building quantum repeater devices for quantum networking applications. Photonic device-coupled single T centers e