Thermal stabilization of 2D and layered carbides through surface modification for functional high-temperature devices

NSF Award Search · 01002526DB NSF RESEARCH & RELATED ACTIVIT · $702,284 · view on nsf.gov ↗

Abstract

NON-TECHNICAL ABSTRACT: The next generation of advances in dependable energy and space exploration technology in the United States will require scientists and engineers to develop functional devices capable of operating in extreme temperatures, high radiation, and chemically reactive environments. In addition to operating in extreme conditions, these devices will remain under the increasingly intense technological demand for miniaturization. Existing materials cannot satisfy these performance requirements. For example, the reliability of current state-of-the-art electronics (logic, memory, contacts, sensors, packaging), based on silicon technology, significantly degrades above 150 °C. Even proposed material solutions (e.g., silicon carbide) rely on thicker metallic contacts that are at best limited to ~350 °C. Layered, few-atom-thick two-dimensional (2D) structures can meet the miniaturization and performance requirements for these next-generation devices for extreme conditions. However, while there are high-temperature-capable 2D semiconductor and insulator candidates, no 2D conductors satisfy the stringent requirements for conductivity, interfacial stability, and thermal stability. This project advances the feasibility of ultra-thin next-generation extreme environment nanoelectronics by advancing the atomic-level design of 2D conductive sheets of transition metal carbides, known as MXenes, for extreme conditions. This is achieved via a synergistic combination of experime

Key facts

NSF award ID
2532344
Awardee
Purdue University (IN)
SAM.gov UEI
YRXVL4JYCEF5
PI
Babak Anasori
Primary program
01002526DB NSF RESEARCH & RELATED ACTIVIT
All programs
Materials Under Extreme Conditions, Microelectronics and Semiconductors
Estimated total
$702,284
Funds obligated
$702,284
Transaction type
Standard Grant
Period
09/15/2025 → 08/31/2028