Collaborative Research: Radiation-Tolerant and Thermally Managed High-Voltage Gallium Oxide Power Diodes for High-Power Space Electronics As modern technologies in space, defense, and energy systems continue to evolve, there is a growing need for high-voltage, compact, and energy-efficient power electronics that can operate reliably in extreme environments, particularly those involving high radiation exposure and elevated temperatures. These demands are especially critical for spacecraft and satellite platforms, where power devices must endure harsh conditions while meeting strict requirements on size, weight, and power efficiency. Conventional semiconductors such as silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) have enabled significant progress in power electronics, yet their performance can be compromised when exposed to intense radiation or high temperatures, often requiring additional shielding to ensure reliability. Beta-gallium oxide (β-Ga₂O₃), an emerging ultra-wide bandgap semiconductor, offers unique advantages for such applications, including the ability to sustain high voltages, resist radiation damage, and support compact device designs. However, its broader adoption remains limited by challenges in producing high-quality materials, managing heat effectively, and developing power devices that can maintain stable performance during prolonged exposure to high-radiation and high-temperature conditions. This project aims to address these limitations