Semiconductor infrared lasers are needed for many applications such as detection of pipe leaks and explosives, environmental and chemical-warfare monitoring, food safety, medical diagnostics, and industrial process control. This project combines novel heterostructures and customized semiconductor materials to demonstrate and develop the much-needed semiconductor lasers. The objectives of the project also include advancement in the understanding and knowledge of how efficient infrared light sources can be made on low-cost Si substrates. The project offers graduate and undergraduate students unique opportunities to pursue education, training and research in multidisciplinary topics (materials science, quantum engineering, photonics, and device fabrication). This project also enhances Oklahoma’s infrastructure for science and technology development and increases the opportunities of students. Many applications require efficient and low-cost mid-infrared semiconductor lasers that can operate continuously with low power consumption at room temperature. By applying an innovative quantum well (QW) active region containing strained InAsP layers to interband cascade lasers (ICLs) in a wide mid-IR spectrum (3-10 μm), their device performance can be significantly improved. Furthermore, advanced waveguide configuration with hybrid cladding layers (with both highly doped semiconductor plasmon layer and superlattice) will be employed and ICLs will be grown on Si substrates, which have m