Collaborative Research: FuSe: Indium selenides based back end of line neuromorphic accelerators

NSF Award Search · 01002526DB NSF RESEARCH & RELATED ACTIVIT · $400,000 · view on nsf.gov ↗

Abstract

This project aims to use innovative materials called “2D materials” to enhance the capabilities of modern integrated circuits. These materials have unique electronic properties that make them very promising for compute, storage, and sensing technologies. However, integrating them with existing silicon-based technology has been a challenge due to temperature restrictions. Luckily, a new group of materials called “indium-based chalcogenides” offers a solution, as they can be synthesized at low temperatures compatible with current technology. The project team plans to create a range of devices using these materials to accelerate the performance of energy-efficient spiking neural networks (SNNs). These brain-inspired microchips will revolutionize how audio, visual, tactile, and olfactory information is processed, making devices smarter and more responsive. Moreover, these microchips could be used in autonomous vehicles, drones, and robots, helping them navigate and avoid obstacles. The project also focuses on training the next generation of scientists and engineers and promoting diversity and inclusivity in the field. This project aims to address the challenge of integrating novel 2D materials with the state-of-the-art silicon-based complementary metal oxide semiconductor (CMOS) technology at the back end of line (BEOL). The key innovation lies in leveraging indium-based chalcogenides, such as InSe and In2Se3, which can be synthesized at low temperatures, making them compatibl

Key facts

NSF award ID
2607464
Awardee
University of Southern California (CA)
SAM.gov UEI
G88KLJR3KYT5
PI
Priyadarshini Panda
Primary program
01002526DB NSF RESEARCH & RELATED ACTIVIT
All programs
Microelectronics and Semiconductors
Estimated total
$400,000
Funds obligated
$317,826
Transaction type
Continuing Grant
Period
10/01/2025 → 09/30/2026